{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11948869","patent":{"patent_number":"US-11948869","title":"Semiconductor device and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2021-07-02T00:00:00.000Z","publication_date":"2024-04-02T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":8,"abstract":"According to one embodiment, a semiconductor device includes a first conductive part, a semiconductor element, a first terminal, and a metal layer. The semiconductor element is located on the first conductive part. The first terminal is separated from the first conductive part in a second direction perpendicular to a first direction. The first direction is from the first conductive part toward the semiconductor element. The first terminal includes a first portion, and a second portion located between the first portion and the first conductive part. A lower surface of the second portion is positioned lower than a lower surface of the first portion and lower than a lower surface of a first insulating portion. The first insulating portion is located between the first conductive part and the second portion. The metal layer is located at the lower surfaces of the first portion and of the second portion."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method for manufacturing the same","description":"According to one embodiment, a semiconductor device includes a first conductive part, a semiconductor element, a first terminal, and a metal layer. The semiconductor element is located on the first co","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11948869","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11948869","citation_suggestion":"Patentable. \"Semiconductor device and method for manufacturing the same\" (US-11948869). https://patentable.app/patents/US-11948869","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11948869","json":"https://patentable.app/api/llm-context/US-11948869","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T03:55:42.010Z"}