{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11948884","patent":{"patent_number":"US-11948884","title":"Semiconductor device and the manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2021-08-24T00:00:00.000Z","publication_date":"2024-04-02T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A semiconductor device includes: a substrate, including an upper surface and a first to a fourth side surfaces; wherein the upper surface includes a first edge connecting the first side surface and a second edge opposite to the first edge and connecting the second side surface; a first modified trace formed on the first side surface; and a semiconductor stack formed on the upper surface, including a lower surface connecting the upper surface of the substrate, and the lower surface comprises a fifth edge adjacent to the first edge and a sixth edge opposite to the fifth edge and adjacent to the second edge; wherein a shortest distance between the first edge and the fifth edge is S1 μm, and a shortest distance between the second edge and the sixth edge is S2 μm; wherein in a lateral view viewing from the third side surface, the first side surface forms a first acute angle with a degree of θ1 with the vertical direction, the second side surface forms a second acute angle with a degree of θ2 with the vertical direction, and a distance between the first modified trace and the upper surface in the vertical direction is D1 μm; and wherein S1, S2, θ1, θ2 and D1 satisfy the equation: D1≤0.2×(S1+S2)/tan θa, wherein θa=(θ1+θ2)/2."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and the manufacturing method thereof","description":"A semiconductor device includes: a substrate, including an upper surface and a first to a fourth side surfaces; wherein the upper surface includes a first edge connecting the first side surface and a ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11948884","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11948884","citation_suggestion":"Patentable. \"Semiconductor device and the manufacturing method thereof\" (US-11948884). https://patentable.app/patents/US-11948884","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11948884","json":"https://patentable.app/api/llm-context/US-11948884","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T18:37:33.252Z"}