{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11948899","patent":{"patent_number":"US-11948899","title":"Semiconductor substrate structure and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2022-11-03T00:00:00.000Z","publication_date":"2024-04-02T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"A semiconductor substrate structure including a first group of circuit structure and a second group of circuit structure is provided. The first group of circuit structure includes multiple first wiring layers and multiple first conductive connectors, and each of the first conductive connectors includes a conductive cap. The second group of circuit structure includes multiple second wiring layers and multiple second conductive connectors. The first group of circuit structure and the second group of circuit structure are electrically connected through bonding of the first conductive connectors and the second conductive connectors to form a multilayer redistribution structure. A manufacturing method of the semiconductor substrate structure is also provided."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor substrate structure and manufacturing method thereof","description":"A semiconductor substrate structure including a first group of circuit structure and a second group of circuit structure is provided. The first group of circuit structure includes multiple first wirin","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11948899","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11948899","citation_suggestion":"Patentable. \"Semiconductor substrate structure and manufacturing method thereof\" (US-11948899). https://patentable.app/patents/US-11948899","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11948899","json":"https://patentable.app/api/llm-context/US-11948899","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T13:14:10.871Z"}