{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11948906","patent":{"patent_number":"US-11948906","title":"Hybrid backside thermal structures for enhanced IC packages","assignee":null,"inventors":[],"filing_date":"2020-02-07T00:00:00.000Z","publication_date":"2024-04-02T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":25,"abstract":"An integrated circuit (IC) die structure comprises a substrate material comprising silicon. Integrated circuitry is over a first side of the substrate material. A composite layer is in direct contact with a second side of the substrate material. The second side is opposite the first side. The composite layer comprises a first constituent material associated with a first linear coefficient of thermal expansion (CTE), and a first thermal conductivity exceeding that of the substrate. The composite layer also comprises a second constituent material associated with a second CTE that is lower than the first, and a second thermal conductivity exceeding that of the substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Hybrid backside thermal structures for enhanced IC packages","description":"An integrated circuit (IC) die structure comprises a substrate material comprising silicon. Integrated circuitry is over a first side of the substrate material. A composite layer is in direct contact ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11948906","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11948906","citation_suggestion":"Patentable. \"Hybrid backside thermal structures for enhanced IC packages\" (US-11948906). https://patentable.app/patents/US-11948906","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11948906","json":"https://patentable.app/api/llm-context/US-11948906","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T00:15:11.671Z"}