{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11948927","patent":{"patent_number":"US-11948927","title":"Semiconductor die with improved thermal insulation between a power portion and a peripheral portion, method of manufacturing, and package housing the die","assignee":null,"inventors":[],"filing_date":"2022-12-28T00:00:00.000Z","publication_date":"2024-04-02T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"A semiconductor die includes a structural body that has a power region and a peripheral region surrounding the power region. At least one power device is positioned in the power region. Trench-insulation means extend in the structural body starting from the front side towards the back side along a first direction, adapted to hinder conduction of heat from the power region towards the peripheral region along a second direction orthogonal to the first direction. The trench-insulation means have an extension, in the second direction, greater than the thickness of the structural body along the first direction."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor die with improved thermal insulation between a power portion and a peripheral portion, method of manufacturing, and package housing the die","description":"A semiconductor die includes a structural body that has a power region and a peripheral region surrounding the power region. At least one power device is positioned in the power region. Trench-insulat","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11948927","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11948927","citation_suggestion":"Patentable. \"Semiconductor die with improved thermal insulation between a power portion and a peripheral portion, method of manufacturing, and package housing the die\" (US-11948927). https://patentable.app/patents/US-11948927","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11948927","json":"https://patentable.app/api/llm-context/US-11948927","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T21:10:34.493Z"}