{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11948941","patent":{"patent_number":"US-11948941","title":"Semiconductor device, integrated circuit and methods of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2021-06-23T00:00:00.000Z","publication_date":"2024-04-02T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","B82Y","H01L"],"num_claims":20,"abstract":"A semiconductor device includes a gate layer, a channel material layer, a first dielectric layer and source/drain terminals. The gate layer is disposed over a substrate. The channel material layer is disposed over the gate layer, where a material of the channel material layer includes a first low dimensional material. The first dielectric layer is between the gate layer and the channel material layer. The source/drain terminals are in contact with the channel material layer, where the channel material layer is at least partially disposed between the source/drain terminals and over the gate layer, and the gate layer is disposed between the substrate and the source/drain terminals."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device, integrated circuit and methods of manufacturing the same","description":"A semiconductor device includes a gate layer, a channel material layer, a first dielectric layer and source/drain terminals. The gate layer is disposed over a substrate. The channel material layer is ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11948941","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11948941","citation_suggestion":"Patentable. \"Semiconductor device, integrated circuit and methods of manufacturing the same\" (US-11948941). https://patentable.app/patents/US-11948941","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11948941","json":"https://patentable.app/api/llm-context/US-11948941","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T12:36:15.210Z"}