{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11948981","patent":{"patent_number":"US-11948981","title":"Seam-filling of metal gates with Si-containing layers","assignee":null,"inventors":[],"filing_date":"2021-08-18T00:00:00.000Z","publication_date":"2024-04-02T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":19,"abstract":"A method includes forming a dummy gate stack over a semiconductor region, forming epitaxial source/drain regions on opposite sides of the dummy gate stack, removing the dummy gate stack to form a trench, depositing a gate dielectric layer extending into the trench, and depositing a work-function layer over the gate dielectric layer. The work-function layer comprises a seam therein. A silicon-containing layer is deposited to fill the seam. A planarization process is performed to remove excess portions of the silicon-containing layer, the work-function layer, and the gate dielectric layer. Remaining portions of the silicon-containing layer, the work-function layer, and the gate dielectric layer form a gate stack."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Seam-filling of metal gates with Si-containing layers","description":"A method includes forming a dummy gate stack over a semiconductor region, forming epitaxial source/drain regions on opposite sides of the dummy gate stack, removing the dummy gate stack to form a tren","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11948981","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11948981","citation_suggestion":"Patentable. \"Seam-filling of metal gates with Si-containing layers\" (US-11948981). https://patentable.app/patents/US-11948981","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11948981","json":"https://patentable.app/api/llm-context/US-11948981","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T17:24:57.200Z"}