{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11948982","patent":{"patent_number":"US-11948982","title":"Semiconductor device and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2021-11-24T00:00:00.000Z","publication_date":"2024-04-02T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":8,"abstract":"A manufacturing method of a semiconductor device includes forming a contact opening in a wafer. The wafer includes a substrate, a gate structure over the substrate and a dielectric layer over the substrate and surrounding the gate structure, and the contact opening passes through the dielectric layer and exposes the substrate. A recess is formed in the substrate such that the recess is connected to the contact opening. An oxidation process is performed to convert a portion of the substrate exposed in the recess to form a protection layer lining a sidewall and a bottom surface of the recess. The protection layer is etched back to remove a first portion of the protection layer in contact with the bottom surface of the recess of the substrate. A metal alloy structure is formed at the bottom surface of the recess of the substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and manufacturing method thereof","description":"A manufacturing method of a semiconductor device includes forming a contact opening in a wafer. The wafer includes a substrate, a gate structure over the substrate and a dielectric layer over the subs","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11948982","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11948982","citation_suggestion":"Patentable. \"Semiconductor device and manufacturing method thereof\" (US-11948982). https://patentable.app/patents/US-11948982","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11948982","json":"https://patentable.app/api/llm-context/US-11948982","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T13:44:41.329Z"}