{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11949007","patent":{"patent_number":"US-11949007","title":"Semiconductor device and method of manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2021-08-18T00:00:00.000Z","publication_date":"2024-04-02T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":14,"abstract":"A semiconductor device includes: an N− drift layer of a first conductivity type formed in the semiconductor substrate; a P base layer formed on the N− drift layer; and an N buffer layer of the first conductivity type formed under the N− drift layer and higher in peak impurity concentration than the N− drift layer. The N buffer layer includes: a first buffer layer in which a trap level derived from lattice defect is not detected by a photoluminescence method; and a second buffer layer provided between the first buffer layer and the N− drift layer and in which two types of trap levels derived from lattice defect are detected by the photoluminescence method."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of manufacturing semiconductor device","description":"A semiconductor device includes: an N− drift layer of a first conductivity type formed in the semiconductor substrate; a P base layer formed on the N− drift layer; and an N buffer layer of the first c","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11949007","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11949007","citation_suggestion":"Patentable. \"Semiconductor device and method of manufacturing semiconductor device\" (US-11949007). https://patentable.app/patents/US-11949007","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11949007","json":"https://patentable.app/api/llm-context/US-11949007","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T15:36:00.365Z"}