{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11950429","patent":{"patent_number":"US-11950429","title":"Ferroelectric capacitors, transistors, memory devices, and methods of manufacturing ferroelectric devices","assignee":null,"inventors":[],"filing_date":"2020-10-23T00:00:00.000Z","publication_date":"2024-04-02T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":20,"abstract":"The present invention relates to ferroelectric capacitors, transistors, memory device, and method of manufacturing ferroelectric devices. The ferroelectric capacitor includes a first electrode, a second electrode facing the first electrode, a ferroelectric layer between the first electrode and the second electrode, and an interfacial layer between the ferroelectric layer and the first electrode or between the ferroelectric layer and the second electrode. The ferroelectric layer includes hafnium-based oxide. The interfacial layer includes HfO2."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Ferroelectric capacitors, transistors, memory devices, and methods of manufacturing ferroelectric devices","description":"The present invention relates to ferroelectric capacitors, transistors, memory device, and method of manufacturing ferroelectric devices. The ferroelectric capacitor includes a first electrode, a seco","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11950429","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11950429","citation_suggestion":"Patentable. \"Ferroelectric capacitors, transistors, memory devices, and methods of manufacturing ferroelectric devices\" (US-11950429). https://patentable.app/patents/US-11950429","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11950429","json":"https://patentable.app/api/llm-context/US-11950429","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T03:12:11.862Z"}