{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11950430","patent":{"patent_number":"US-11950430","title":"Memory cell, capacitive memory structure, and methods thereof","assignee":null,"inventors":[],"filing_date":"2020-10-30T00:00:00.000Z","publication_date":"2024-04-02T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","B82Y","G11C"],"num_claims":18,"abstract":"According to various aspects, a memory cell is provided, the memory cell including: a first electrode; a second electrode; and a memory structure disposed between the first electrode and the second electrode, the first electrode, the second electrode, and the memory structure forming a memory capacitor, wherein at least one of the first electrode or the second electrode includes: a first electrode layer including a first material having a first microstructure; a functional layer in direct contact with the first electrode layer; and a second electrode layer in direct contact with the functional layer, the second electrode layer including a second material having a second microstructure different from the first microstructure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory cell, capacitive memory structure, and methods thereof","description":"According to various aspects, a memory cell is provided, the memory cell including: a first electrode; a second electrode; and a memory structure disposed between the first electrode and the second el","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11950430","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11950430","citation_suggestion":"Patentable. \"Memory cell, capacitive memory structure, and methods thereof\" (US-11950430). https://patentable.app/patents/US-11950430","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11950430","json":"https://patentable.app/api/llm-context/US-11950430","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:11:37.163Z"}