{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11955176","patent":{"patent_number":"US-11955176","title":"Nonvolatile semiconductor storage device having memory strings and bit lines on opposite sides of the memory strings","assignee":null,"inventors":[],"filing_date":"2021-08-27T00:00:00.000Z","publication_date":"2024-04-09T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"A nonvolatile semiconductor storage device includes first and second semiconductor layers extending in a first direction and spaced apart in a second direction, first and second bit lines extending in the second direction and respectively arranged on opposite sides of the semiconductor layers in the first direction, first and second source lines extending in a third direction and respectively arranged on opposite sides of the semiconductor layers in the first direction, a first memory string including first and second select transistors connected to the first bit line and the first source line, respectively, a second memory string including third and fourth select transistors connected to the second bit line and the second source line, respectively, a first select gate line connected to gates of the first and fourth select transistors, and a second select gate line connected to gates of the second and third select transistors."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nonvolatile semiconductor storage device having memory strings and bit lines on opposite sides of the memory strings","description":"A nonvolatile semiconductor storage device includes first and second semiconductor layers extending in a first direction and spaced apart in a second direction, first and second bit lines extending in","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11955176","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11955176","citation_suggestion":"Patentable. \"Nonvolatile semiconductor storage device having memory strings and bit lines on opposite sides of the memory strings\" (US-11955176). https://patentable.app/patents/US-11955176","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11955176","json":"https://patentable.app/api/llm-context/US-11955176","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T11:53:45.382Z"}