{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11955183","patent":{"patent_number":"US-11955183","title":"Memory device and method of reading data","assignee":null,"inventors":[],"filing_date":"2022-05-30T00:00:00.000Z","publication_date":"2024-04-09T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"A non-volatile memory includes a memory cell region including an outer region proximate a first end of the memory cell region and an inner region separated from the first end by the outer region, first and second bit lines, an outer memory cell string including memory cells connected to an outer pillar extending vertically upward through the outer region, and an inner memory cell string including memory cells connected to an inner pillar extending vertically upward through the inner region, and a data input/output (I/O). The data I/O circuit includes a page buffer circuit that connects the first bit line during a first read operation directed to memory cells of the outer memory cell string, and connects the second bit line during a second read operation directed to memory cells of the inner memory cell string, and a read voltage determination unit that selects a first optimal read voltage used during the first read operation, and a second optimal read voltage used during the second read operation."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory device and method of reading data","description":"A non-volatile memory includes a memory cell region including an outer region proximate a first end of the memory cell region and an inner region separated from the first end by the outer region, firs","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11955183","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11955183","citation_suggestion":"Patentable. \"Memory device and method of reading data\" (US-11955183). https://patentable.app/patents/US-11955183","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11955183","json":"https://patentable.app/api/llm-context/US-11955183","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:11:10.083Z"}