{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11955316","patent":{"patent_number":"US-11955316","title":"Substrate processing method, method for manufacturing semiconducor device, and plasma processing apparatus","assignee":null,"inventors":[],"filing_date":"2020-09-29T00:00:00.000Z","publication_date":"2024-04-09T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":15,"abstract":"A substrate processing method includes: providing a substrate including a first region and a second region into a chamber; forming a deposit film on the first region and the second region of the substrate by generating a first plasma from a first processing gas, and selectively etching the first region with respect to the second region by generating a second plasma from the second processing gas containing an inert gas. The first processing gas is a mixed gas including a first gas containing carbon atoms and fluorine atoms and a second gas containing silicon atoms."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Substrate processing method, method for manufacturing semiconducor device, and plasma processing apparatus","description":"A substrate processing method includes: providing a substrate including a first region and a second region into a chamber; forming a deposit film on the first region and the second region of the subst","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11955316","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11955316","citation_suggestion":"Patentable. \"Substrate processing method, method for manufacturing semiconducor device, and plasma processing apparatus\" (US-11955316). https://patentable.app/patents/US-11955316","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11955316","json":"https://patentable.app/api/llm-context/US-11955316","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T02:40:49.766Z"}