{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11955330","patent":{"patent_number":"US-11955330","title":"Microelectronic devices including an interdeck region between deck structures, and related electronic devices","assignee":null,"inventors":[],"filing_date":"2022-06-01T00:00:00.000Z","publication_date":"2024-04-09T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"A method of forming a microelectronic device comprises forming openings in an interdeck region and a first deck structure, the first deck structure comprising alternating levels of a first insulative material and a second insulative material, forming a first sacrificial material in the openings, removing a portion of the first sacrificial material from the interdeck region to expose sidewalls of the first insulative material and the second insulative material in the interdeck region, removing a portion of the first insulative material and the second insulative material in the interdeck region to form tapered sidewalls in the interdeck region, removing remaining portions of the first sacrificial material from the openings, and forming at least a second sacrificial material in the openings. Related methods of forming a microelectronic devices and related microelectronic devices are disclosed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Microelectronic devices including an interdeck region between deck structures, and related electronic devices","description":"A method of forming a microelectronic device comprises forming openings in an interdeck region and a first deck structure, the first deck structure comprising alternating levels of a first insulative ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11955330","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11955330","citation_suggestion":"Patentable. \"Microelectronic devices including an interdeck region between deck structures, and related electronic devices\" (US-11955330). https://patentable.app/patents/US-11955330","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11955330","json":"https://patentable.app/api/llm-context/US-11955330","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:13:14.864Z"}