{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11955336","patent":{"patent_number":"US-11955336","title":"Method of manufacturing a semiconductor device","assignee":null,"inventors":[],"filing_date":"2021-04-23T00:00:00.000Z","publication_date":"2024-04-09T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Method of manufacturing a semiconductor device, includes forming a protective layer over substrate having a plurality of protrusions and recesses. The protective layer includes polymer composition including polymer having repeating units of one or more of: Wherein a, b, c, d, e, f, g, h, and i are each independently H, —OH, —ROH, —R(OH)2, —NH2, —NHR, —NR2, —SH, —RSH, or —R(SH)2, wherein at least one of a, b, c, d, e, f, g, h, and i on each repeating unit is not H. R, R1, and R2 are each independently a C1-C10 alkyl group, a C3-C10 cycloalkyl group, a C1-C10 hydroxyalkyl group, a C2-C10 alkoxy group, a C2-C10 alkoxy alkyl group, a C2-C10 acetyl group, a C3-C10 acetylalkyl group, a C1-C10 carboxyl group, a C2-C10 alkyl carboxyl group, or a C4-C10 cycloalkyl carboxyl group, and n is 2-1000. A resist layer is formed over the protective layer, and the resist layer is patterned. "},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing a semiconductor device","description":"Method of manufacturing a semiconductor device, includes forming a protective layer over substrate having a plurality of protrusions and recesses. The protective layer includes polymer composition inc","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11955336","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11955336","citation_suggestion":"Patentable. \"Method of manufacturing a semiconductor device\" (US-11955336). https://patentable.app/patents/US-11955336","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11955336","json":"https://patentable.app/api/llm-context/US-11955336","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:32:54.833Z"}