{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11955369","patent":{"patent_number":"US-11955369","title":"Recessed local interconnect formed over self-aligned double diffusion break","assignee":null,"inventors":[],"filing_date":"2021-06-08T00:00:00.000Z","publication_date":"2024-04-09T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":8,"abstract":"An approach for creating a buried local interconnect around a DDB (double diffusion break) to reduce parasitic capacitance on a semiconductor device is disclosed. The approach utilizes a metal, as the local interconnect, buried in a cavity around the DDB region of a semiconductor substrate. The metal is disposed by two dielectric layers and the substrate. The two dielectric layers are recessed beneath two gate spacers. The buried local interconnect is recessed into the cavity where the top surface of the interconnect is situated below the top surface of the surrounding S/D (source/drain) epi (epitaxy). The metal of the local interconnect can be made from W, Ru or Co."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Recessed local interconnect formed over self-aligned double diffusion break","description":"An approach for creating a buried local interconnect around a DDB (double diffusion break) to reduce parasitic capacitance on a semiconductor device is disclosed. The approach utilizes a metal, as the","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11955369","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11955369","citation_suggestion":"Patentable. \"Recessed local interconnect formed over self-aligned double diffusion break\" (US-11955369). https://patentable.app/patents/US-11955369","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11955369","json":"https://patentable.app/api/llm-context/US-11955369","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:47:52.705Z"}