{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11955374","patent":{"patent_number":"US-11955374","title":"Method for forming SOI substrate","assignee":null,"inventors":[],"filing_date":"2021-08-29T00:00:00.000Z","publication_date":"2024-04-09T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A method of forming a semiconductor-on-insulator (SOI) substrate includes: forming a first dielectric layer on a first substrate; forming a buffer layer on a second substrate; forming a semiconductor cap on the buffer layer over the second substrate; forming a cleavage plane in the buffer layer; forming a second dielectric layer on the semiconductor cap after forming the cleavage plane; bonding the second dielectric layer on the second substrate to the first dielectric layer on the first substrate; performing a splitting process along the cleavage plane in the buffer layer; removing a first split buffer layer from the semiconductor cap; and removing a second split buffer layer from the second substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for forming SOI substrate","description":"A method of forming a semiconductor-on-insulator (SOI) substrate includes: forming a first dielectric layer on a first substrate; forming a buffer layer on a second substrate; forming a semiconductor ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11955374","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11955374","citation_suggestion":"Patentable. \"Method for forming SOI substrate\" (US-11955374). https://patentable.app/patents/US-11955374","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11955374","json":"https://patentable.app/api/llm-context/US-11955374","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:47:17.573Z"}