{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11955376","patent":{"patent_number":"US-11955376","title":"Etch damage and ESL free dual damascene metal interconnect","assignee":null,"inventors":[],"filing_date":"2021-11-04T00:00:00.000Z","publication_date":"2024-04-09T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Some embodiments relate to a semiconductor device disposed on a semiconductor substrate. A dielectric structure is arranged over the semiconductor substrate. First and second metal vias are disposed in the dielectric structure and spaced laterally apart from one another. First and second metal lines are disposed in the dielectric structure and have nearest neighboring sidewalls that are spaced laterally apart from one another by a portion of the dielectric structure. The first and second metal lines contact upper portions of the first and second metal vias, respectively. First and second air gaps are disposed in the portion of the dielectric structure. The first and second air gaps are proximate to nearest neighboring sidewalls of the first and second metal lines, respectively."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Etch damage and ESL free dual damascene metal interconnect","description":"Some embodiments relate to a semiconductor device disposed on a semiconductor substrate. A dielectric structure is arranged over the semiconductor substrate. First and second metal vias are disposed i","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11955376","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11955376","citation_suggestion":"Patentable. \"Etch damage and ESL free dual damascene metal interconnect\" (US-11955376). https://patentable.app/patents/US-11955376","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11955376","json":"https://patentable.app/api/llm-context/US-11955376","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:50:59.733Z"}