{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11955384","patent":{"patent_number":"US-11955384","title":"Stacked semiconductor device with nanostructure channels and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2022-02-17T00:00:00.000Z","publication_date":"2024-04-09T00:00:00.000Z","cpc_codes":["H01L","B82Y"],"num_claims":20,"abstract":"A device includes a bottom transistor, a top transistor, and an epitaxial isolation structure. The bottom transistor includes a first channel layer, first source/drain epitaxial structures, and a first gate structure. The first source/drain epitaxial structures are on opposite sides of the first channel layer. The first gate structure is around the first channel layer. The top transistor is over the bottom transistor and includes a second channel layer, second source/drain epitaxial structures, and a second gate structure. The second source/drain epitaxial structures are on opposite sides of the second channel layer. The second gate structure is around the second channel layer. The epitaxial isolation structure is between and in contact with one of the first source/drain epitaxial structures and one of the second source/drain epitaxial structures, such that the one of the first source/drain epitaxial structures is electrically isolated from the one of the second source/drain epitaxial structures."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Stacked semiconductor device with nanostructure channels and manufacturing method thereof","description":"A device includes a bottom transistor, a top transistor, and an epitaxial isolation structure. The bottom transistor includes a first channel layer, first source/drain epitaxial structures, and a firs","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11955384","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11955384","citation_suggestion":"Patentable. \"Stacked semiconductor device with nanostructure channels and manufacturing method thereof\" (US-11955384). https://patentable.app/patents/US-11955384","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11955384","json":"https://patentable.app/api/llm-context/US-11955384","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T08:34:35.263Z"}