{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11955386","patent":{"patent_number":"US-11955386","title":"Method for evaluating defective region of wafer","assignee":null,"inventors":[],"filing_date":"2018-12-27T00:00:00.000Z","publication_date":"2024-04-09T00:00:00.000Z","cpc_codes":["H01L","G01N","G01N","G01N","H01L","G01N"],"num_claims":10,"abstract":"This embodiment comprises: a step for preparing a sample wafer; a step for forming a first oxide film on the sample wafer at a temperature of 700-800° C.; a step for forming a second oxide film on the first oxide film at a temperature of 800-1000° C.; a step for forming a third oxide film on the second oxide film at a temperature of 1000-1100° C.; a step for forming a fourth oxide film on the third oxide film at a temperature of 1100-1200° C.; a step for removing the first to fourth oxide films; a step for forming a haze on the surface of the sample wafer by etching the sample wafer from which the first to fourth oxide films have been removed; and a step for evaluating a defective region of the sample wafer on the basis of the haze."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for evaluating defective region of wafer","description":"This embodiment comprises: a step for preparing a sample wafer; a step for forming a first oxide film on the sample wafer at a temperature of 700-800° C.; a step for forming a second oxide film on the","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11955386","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11955386","citation_suggestion":"Patentable. \"Method for evaluating defective region of wafer\" (US-11955386). https://patentable.app/patents/US-11955386","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11955386","json":"https://patentable.app/api/llm-context/US-11955386","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T15:11:51.818Z"}