{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11955408","patent":{"patent_number":"US-11955408","title":"Integrated circuit semiconductor device including through silicon via","assignee":null,"inventors":[],"filing_date":"2020-09-29T00:00:00.000Z","publication_date":"2024-04-09T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"An integrated circuit semiconductor device includes a substrate including a first surface and a second surface opposite the first surface, a trench in the substrate, the trench extending from the first surface of the substrate toward the second surface of the substrate, a through silicon via (TSV) landing part in the trench, the TSV landing part having a first portion spaced apart from the first surface of the substrate, and a second portion between the first portion and the first surface of the substrate, the first portion being wider than the second portion, a TSV hole in the substrate, the TSV hole extending from the second surface of the substrate and aligned with a bottom surface of the TSV landing part, and a TSV in the TSV hole and in contact with the bottom surface of the TSV landing part."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Integrated circuit semiconductor device including through silicon via","description":"An integrated circuit semiconductor device includes a substrate including a first surface and a second surface opposite the first surface, a trench in the substrate, the trench extending from the firs","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11955408","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11955408","citation_suggestion":"Patentable. \"Integrated circuit semiconductor device including through silicon via\" (US-11955408). https://patentable.app/patents/US-11955408","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11955408","json":"https://patentable.app/api/llm-context/US-11955408","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:21:12.629Z"}