{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11955423","patent":{"patent_number":"US-11955423","title":"Semiconductor device and method","assignee":null,"inventors":[],"filing_date":"2021-03-26T00:00:00.000Z","publication_date":"2024-04-09T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Methods for forming dummy under-bump metallurgy structures and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a first redistribution line and a second redistribution line over a semiconductor substrate; a first passivation layer over the first redistribution line and the second redistribution line; a second passivation layer over the first passivation layer; a first under-bump metallurgy (UBM) structure over the first redistribution line, the first UBM structure extending through the first passivation layer and the second passivation layer and being electrically coupled to the first redistribution line; and a second UBM structure over the second redistribution line, the second UBM structure extending through the second passivation layer, the second UBM structure being electrically isolated from the second redistribution line by the first passivation layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method","description":"Methods for forming dummy under-bump metallurgy structures and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a first redistribution line and","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11955423","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11955423","citation_suggestion":"Patentable. \"Semiconductor device and method\" (US-11955423). https://patentable.app/patents/US-11955423","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11955423","json":"https://patentable.app/api/llm-context/US-11955423","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:32:49.981Z"}