{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11955429","patent":{"patent_number":"US-11955429","title":"Three-dimensional memory device and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2023-06-02T00:00:00.000Z","publication_date":"2024-04-09T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":3,"abstract":"A method for manufacturing a three-dimensional memory device, comprises: forming, on a substrate, a sacrificial layer including a plurality of sacrificial patterns for vias and a sacrificial pattern for a row line; forming an interlayer dielectric layer that covers the sacrificial pattern for a row line and the sacrificial pattern for a via coupled to the sacrificial pattern for a row line and that has a plurality of holes exposing sacrificial patterns for vias, from among the plurality of sacrificial patterns for vias, that are not coupled to the sacrificial pattern for a row line; forming a plurality of first conductive patterns in the plurality of holes; repeating the forming of the sacrificial layer; and replacing the plurality of sacrificial layers with a conductive material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Three-dimensional memory device and manufacturing method thereof","description":"A method for manufacturing a three-dimensional memory device, comprises: forming, on a substrate, a sacrificial layer including a plurality of sacrificial patterns for vias and a sacrificial pattern f","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11955429","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11955429","citation_suggestion":"Patentable. \"Three-dimensional memory device and manufacturing method thereof\" (US-11955429). https://patentable.app/patents/US-11955429","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11955429","json":"https://patentable.app/api/llm-context/US-11955429","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T20:29:55.158Z"}