{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11955555","patent":{"patent_number":"US-11955555","title":"Field effect transistors with reduced leakage current","assignee":null,"inventors":[],"filing_date":"2022-06-06T00:00:00.000Z","publication_date":"2024-04-09T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":19,"abstract":"A field effect transistor (FET) includes an active region including a source region, a drain region, and a channel region. The channel region is under a gate and situated between the source region and the drain region. A field region is next to the active region. The channel region has an interface with the field region. The gate has a wide outer gate segment proximate to the interface and a narrow inner gate segment distant from the interface. The wide outer gate segment produces an outer channel length greater than an inner channel length that is produced from the narrow inner gate segment, thereby reducing a leakage current of the FET during an OFF state."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Field effect transistors with reduced leakage current","description":"A field effect transistor (FET) includes an active region including a source region, a drain region, and a channel region. The channel region is under a gate and situated between the source region and","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11955555","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11955555","citation_suggestion":"Patentable. \"Field effect transistors with reduced leakage current\" (US-11955555). https://patentable.app/patents/US-11955555","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11955555","json":"https://patentable.app/api/llm-context/US-11955555","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T08:35:55.233Z"}