{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11956939","patent":{"patent_number":"US-11956939","title":"Static random access memory using vertical transport field effect transistors","assignee":null,"inventors":[],"filing_date":"2023-03-14T00:00:00.000Z","publication_date":"2024-04-09T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A memory device includes a first field effect transistor (FET) stack on a first bottom source/drain region, which includes a first vertical transport field effect transistor (VTFET) device between a second VTFET device and the first source/drain region, and a second FET stack on a second bottom source/drain region, which includes a third VTFET device between a fourth VTFET device and the bottom source/drain region. The memory device includes a third FET stack on a third bottom source/drain region, which includes a fifth VTFET between a sixth VTFET and the third source/drain region, which is laterally adjacent to the first and second source/drain regions. The memory device includes a first electrical connection interconnecting a gate structure of the third VTFET with a gate structure of the fifth VTFET, and a second electrical connection interconnecting a gate structure of the second VTFET with a gate structure of the sixth VTFET."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Static random access memory using vertical transport field effect transistors","description":"A memory device includes a first field effect transistor (FET) stack on a first bottom source/drain region, which includes a first vertical transport field effect transistor (VTFET) device between a s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11956939","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11956939","citation_suggestion":"Patentable. \"Static random access memory using vertical transport field effect transistors\" (US-11956939). https://patentable.app/patents/US-11956939","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11956939","json":"https://patentable.app/api/llm-context/US-11956939","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:51:59.037Z"}