{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11956942","patent":{"patent_number":"US-11956942","title":"Memory device and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2021-09-10T00:00:00.000Z","publication_date":"2024-04-09T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":11,"abstract":"According to one embodiment, a device includes: a circuit on a first surface of a substrate and including a first contact; an aluminum oxide layer above the substrate in a first direction perpendicular to the first surface; a cell including a capacitor provided in the aluminum oxide layer; a first conductive layer provided between the substrate and the aluminum oxide layer in the first direction and connected to the cell; a first insulating layer between the first conductive layer and the substrate in the first direction; a second insulating layer adjacent to the aluminum oxide layer in a second direction parallel to the first surface and provided above the substrate in the first direction; and a second contact in the second insulating layer and above the first contact in the first direction to connect the cell to the first contact."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory device and method for manufacturing the same","description":"According to one embodiment, a device includes: a circuit on a first surface of a substrate and including a first contact; an aluminum oxide layer above the substrate in a first direction perpendicula","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11956942","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11956942","citation_suggestion":"Patentable. \"Memory device and method for manufacturing the same\" (US-11956942). https://patentable.app/patents/US-11956942","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11956942","json":"https://patentable.app/api/llm-context/US-11956942","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:03:00.491Z"}