{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11956955","patent":{"patent_number":"US-11956955","title":"Method used in forming a memory array comprising strings of memory cells in which liners are isotropically etched","assignee":null,"inventors":[],"filing_date":"2021-01-15T00:00:00.000Z","publication_date":"2024-04-09T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":17,"abstract":"A liner is formed laterally-outside of individual channel-material strings in one of first tiers and in one of second tiers. The liners are isotropically etched to form void-spaces in the one second tier above the one first tier. Individual of the void-spaces are laterally-between the individual channel-material strings and the second-tier material in the one second tier. Conductively-doped semiconductive material is formed against sidewalls of the channel material of the channel-material strings in the one first tier and that extends upwardly into the void-spaces in the one second tier. The conductively-doped semiconductive material is heated to diffuse conductivity-increasing dopants therein from the void-spaces laterally into the channel material laterally there-adjacent and upwardly into the channel material that is above the void-spaces."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method used in forming a memory array comprising strings of memory cells in which liners are isotropically etched","description":"A liner is formed laterally-outside of individual channel-material strings in one of first tiers and in one of second tiers. The liners are isotropically etched to form void-spaces in the one second t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11956955","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11956955","citation_suggestion":"Patentable. \"Method used in forming a memory array comprising strings of memory cells in which liners are isotropically etched\" (US-11956955). https://patentable.app/patents/US-11956955","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11956955","json":"https://patentable.app/api/llm-context/US-11956955","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T13:44:32.658Z"}