{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11956976","patent":{"patent_number":"US-11956976","title":"3D semiconductor devices and structures with transistors","assignee":null,"inventors":[],"filing_date":"2023-08-15T00:00:00.000Z","publication_date":"2024-04-09T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device including: a plurality of transistors, where at least one of the transistors includes a first single crystal source, channel, and drain, where at least one of the transistors includes a second single crystal source, channel, and drain, where the second single crystal source, channel, and drain is disposed above the first single crystal source, channel, and drain, where at least one of the transistors includes a third single crystal source, channel, and drain, where the third single crystal source, channel, and drain is disposed above the second single crystal source, channel, and drain, where at least one of the transistors includes a fourth single crystal source, channel, and drain, where the fourth single crystal source, channel, and drain is disposed above the third single crystal source, channel, and drain, and where the fourth drain is aligned to the first drain with less than 40 nm misalignment."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"3D semiconductor devices and structures with transistors","description":"A semiconductor device including: a plurality of transistors, where at least one of the transistors includes a first single crystal source, channel, and drain, where at least one of the transistors in","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11956976","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11956976","citation_suggestion":"Patentable. \"3D semiconductor devices and structures with transistors\" (US-11956976). https://patentable.app/patents/US-11956976","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11956976","json":"https://patentable.app/api/llm-context/US-11956976","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T13:16:08.634Z"}