{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11957062","patent":{"patent_number":"US-11957062","title":"Memory","assignee":null,"inventors":[],"filing_date":"2020-12-14T00:00:00.000Z","publication_date":"2024-04-09T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":20,"abstract":"A memory includes a transistor and a magnetic tunnel junction (MTJ) storage element, a bottom electrode of the MTJ storage element is electrically connected to a drain electrode of the transistor using a conduction structure, wiring layers are disposed between the transistor and the MTJ storage element in the storage area, and a dielectric layer is filled between adjacent wiring layers, the conduction structure includes a first conduction part, and the first conduction part includes a first metal wire, a second metal wire, and a first via hole, the wiring layers comprise a first wiring layer, a second wiring layer, and a third wiring layer, the first via hole penetrates a dielectric layer and the third wiring layer that are located between the first wiring layer and the second wiring layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory","description":"A memory includes a transistor and a magnetic tunnel junction (MTJ) storage element, a bottom electrode of the MTJ storage element is electrically connected to a drain electrode of the transistor usin","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11957062","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11957062","citation_suggestion":"Patentable. \"Memory\" (US-11957062). https://patentable.app/patents/US-11957062","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11957062","json":"https://patentable.app/api/llm-context/US-11957062","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:44:33.898Z"}