{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11957067","patent":{"patent_number":"US-11957067","title":"Phase-change memory cell having a compact structure","assignee":null,"inventors":[],"filing_date":"2021-05-24T00:00:00.000Z","publication_date":"2024-04-09T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C"],"num_claims":8,"abstract":"A memory cell includes a selection transistor having a control gate and a first conduction terminal connected to a variable-resistance element. The memory cell is formed in a wafer comprising a semiconductor substrate covered with a first insulating layer, the insulating layer being covered with an active layer made of a semiconductor. The gate is formed on the active layer and has a lateral flank covered with a second insulating layer. The variable-resistance element includes a first layer covering a lateral flank of the active layer in a trench formed through the active layer along the lateral flank of the gate and reaching the first insulating layer, and a second layer made of a variable-resistance material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Phase-change memory cell having a compact structure","description":"A memory cell includes a selection transistor having a control gate and a first conduction terminal connected to a variable-resistance element. The memory cell is formed in a wafer comprising a semico","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11957067","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11957067","citation_suggestion":"Patentable. \"Phase-change memory cell having a compact structure\" (US-11957067). https://patentable.app/patents/US-11957067","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11957067","json":"https://patentable.app/api/llm-context/US-11957067","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:13:34.970Z"}