{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11957069","patent":{"patent_number":"US-11957069","title":"Contact resistance of a metal liner in a phase change memory cell","assignee":null,"inventors":[],"filing_date":"2021-10-22T00:00:00.000Z","publication_date":"2024-04-09T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":18,"abstract":"An approach to provide a semiconductor structure for a phase change memory cell with a first liner material surrounding a sidewall of a hole in a dielectric material where the hole in the dielectric is on a bottom electrode in the dielectric material. The semiconductor structure includes a layer of a second liner material on the first liner material, where the second liner material has an improved contact resistance to a phase change material. The semiconductor structure includes the phase change material abutting the layer of the second liner material on the first liner material. The phase change material fills the hole in the dielectric material. The second liner material that is between the phase change material and the first liner material provides a lower contact resistivity with the phase change material in the crystalline phase than the first liner material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Contact resistance of a metal liner in a phase change memory cell","description":"An approach to provide a semiconductor structure for a phase change memory cell with a first liner material surrounding a sidewall of a hole in a dielectric material where the hole in the dielectric i","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11957069","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11957069","citation_suggestion":"Patentable. \"Contact resistance of a metal liner in a phase change memory cell\" (US-11957069). https://patentable.app/patents/US-11957069","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11957069","json":"https://patentable.app/api/llm-context/US-11957069","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T10:41:08.100Z"}