{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11959191","patent":{"patent_number":"US-11959191","title":"Method for manufacturing silicon single crystal wafer and silicon single crystal wafer","assignee":null,"inventors":[],"filing_date":"2020-02-05T00:00:00.000Z","publication_date":"2024-04-16T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":1,"abstract":"A method for manufacturing a silicon single crystal wafer for a multilayer structure device including: using a silicon single crystal wafer with oxygen concentration of 12 ppma (JEITA) or higher and composing an NV region; and performing an RTA treatment in a nitrogen-containing atmosphere and a temperature of 1225° C. or higher, a mirror-polish processing treatment, and a BMD-forming heat treatment manufacturing a silicon single crystal wafer having at least a DZ layer with a thickness of 5 to 12.5 μm and a BMD layer positioned immediately below the DZ layer and a BMD density of 1×1011/cm3 or higher from the silicon single crystal wafer surface. During device formation, the silicon wafer surface stress is absorbed immediately below a surface layer, distortion defects are absorbed by the BMD layer, device formation region strength is enhanced, and surface layer dislocation occurrence and extension is suppressed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing silicon single crystal wafer and silicon single crystal wafer","description":"A method for manufacturing a silicon single crystal wafer for a multilayer structure device including: using a silicon single crystal wafer with oxygen concentration of 12 ppma (JEITA) or higher and c","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11959191","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11959191","citation_suggestion":"Patentable. \"Method for manufacturing silicon single crystal wafer and silicon single crystal wafer\" (US-11959191). https://patentable.app/patents/US-11959191","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11959191","json":"https://patentable.app/api/llm-context/US-11959191","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T16:08:32.435Z"}