{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11961544","patent":{"patent_number":"US-11961544","title":"Spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) with low resistivity spin hall effect (SHE) write line","assignee":null,"inventors":[],"filing_date":"2021-05-27T00:00:00.000Z","publication_date":"2024-04-16T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C"],"num_claims":10,"abstract":"Embodiments of the invention include a method for fabricating a magnetoresistive random-access memory (MRAM) structure and the resulting structure. A first type of metal is formed on an interlayer dielectric layer with a plurality of embedded contacts, where the first type of metal exhibits spin Hall effect (SHE) properties. At least one spin-orbit torque (SOT) MRAM cell is formed on the first type of metal. One or more recesses surrounding the at least one SOT-MRAM cell are created by recessing exposed portions of the first type of metal. A second type of metal is formed in the one or more recesses, where the second type of metal has lower resistivity than the first type of metal."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) with low resistivity spin hall effect (SHE) write line","description":"Embodiments of the invention include a method for fabricating a magnetoresistive random-access memory (MRAM) structure and the resulting structure. A first type of metal is formed on an interlayer die","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11961544","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11961544","citation_suggestion":"Patentable. \"Spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) with low resistivity spin hall effect (SHE) write line\" (US-11961544). https://patentable.app/patents/US-11961544","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11961544","json":"https://patentable.app/api/llm-context/US-11961544","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:43:43.999Z"}