{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11961557","patent":{"patent_number":"US-11961557","title":"Memory device","assignee":null,"inventors":[],"filing_date":"2022-06-16T00:00:00.000Z","publication_date":"2024-04-16T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":18,"abstract":"A memory cell is coupled between first and interconnects and includes a variable resistance element and a switching element. The variable resistance element includes first and second ferromagnetic layers and an insulating layer between the first and second ferromagnetic layers. A first circuit is configured to apply a first voltage to the first interconnect. A second circuit is configured to apply a second voltage to the second interconnect. A third circuit is configured to apply a third voltage to the second interconnect. A fourth circuit is configured to apply a fourth voltage to the first interconnect. A sense amplifier circuit is coupled to the first and second interconnects."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory device","description":"A memory cell is coupled between first and interconnects and includes a variable resistance element and a switching element. The variable resistance element includes first and second ferromagnetic lay","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11961557","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11961557","citation_suggestion":"Patentable. \"Memory device\" (US-11961557). https://patentable.app/patents/US-11961557","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11961557","json":"https://patentable.app/api/llm-context/US-11961557","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:11:25.096Z"}