{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11961565","patent":{"patent_number":"US-11961565","title":"Multi-program of memory cells without intervening erase operations","assignee":null,"inventors":[],"filing_date":"2022-02-10T00:00:00.000Z","publication_date":"2024-04-16T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":18,"abstract":"A memory device includes an array of memory cells configured as single-level cell memory and control logic operatively coupled with the array of memory cells. The control logic is to perform operations including: causing first data to be programmed to a plurality of memory cells of the array of memory cells, the first data including a first erase distribution programmed below an erase threshold voltage (Vt) level and a first voltage distribution programmed relative to a first Vt level; and causing, without erasing the plurality of memory cells, second data to be programmed to the plurality of memory cells, the second data including a second erase distribution programmed relative to the first Vt level and a second voltage distribution programmed relative to a second Vt level."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Multi-program of memory cells without intervening erase operations","description":"A memory device includes an array of memory cells configured as single-level cell memory and control logic operatively coupled with the array of memory cells. The control logic is to perform operation","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11961565","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11961565","citation_suggestion":"Patentable. \"Multi-program of memory cells without intervening erase operations\" (US-11961565). https://patentable.app/patents/US-11961565","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11961565","json":"https://patentable.app/api/llm-context/US-11961565","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T03:55:43.493Z"}