{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11961581","patent":{"patent_number":"US-11961581","title":"Assemblies comprising memory cells and select gates; and methods of forming assemblies","assignee":null,"inventors":[],"filing_date":"2021-10-12T00:00:00.000Z","publication_date":"2024-04-16T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"Some embodiments include an assembly having a stack of alternating dielectric levels and conductive levels. Channel material pillars extend through the stack. Some of the channel material pillars are associated with a first sub-block, and others of the channel material pillars are associated with a second sub-block. Memory cells are along the channel material pillars. An insulative level is over the stack. A select gate configuration is over the insulative level. The select gate configuration includes a first conductive gate structure associated with the first sub-block, and includes a second conductive gate structure associated with the second sub-block. The first and second conductive gate structures are laterally spaced from one another by an intervening insulative region. The first and second conductive gate structures have vertically-spaced conductive regions, and have vertically-extending conductive structures which electrically couple the vertically-spaced conductive regions to one another. Some embodiments include methods of forming assemblies."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Assemblies comprising memory cells and select gates; and methods of forming assemblies","description":"Some embodiments include an assembly having a stack of alternating dielectric levels and conductive levels. Channel material pillars extend through the stack. Some of the channel material pillars are ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11961581","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11961581","citation_suggestion":"Patentable. \"Assemblies comprising memory cells and select gates; and methods of forming assemblies\" (US-11961581). https://patentable.app/patents/US-11961581","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11961581","json":"https://patentable.app/api/llm-context/US-11961581","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:50:56.345Z"}