{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11961765","patent":{"patent_number":"US-11961765","title":"Method for manufacturing a semiconductor substrate and device by bonding an epitaxial substrate to a first support substrate, forming a first and second protective thin film layer, and exposing and bonding a nitride semiconductor layer to a second support substrate","assignee":null,"inventors":[],"filing_date":"2019-05-23T00:00:00.000Z","publication_date":"2024-04-16T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"The present invention relates to a method for manufacturing a semiconductor substrate, including: (a) preparing an epitaxial substrate having a nitride semiconductor layer formed on a first main surface of a growth substrate and preparing a first support substrate, forming a resin adhesive layer between the first main surface of the growth substrate and a first main surface of the first support substrate, and bonding the epitaxial substrate to the first support substrate; (b) thinning a second main surface of the growth substrate; (c) forming a first protective thin film layer on the thinned growth substrate; (d) forming a second protective thin film layer on the first support substrate; (e) removing the thinned growth substrate; (f) bonding a second support substrate onto the nitride semiconductor layer; and (g) removing the first support substrate and the resin adhesive layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing a semiconductor substrate and device by bonding an epitaxial substrate to a first support substrate, forming a first and second protective thin film layer, and exposing and bonding a nitride semiconductor layer to a second support substrate","description":"The present invention relates to a method for manufacturing a semiconductor substrate, including: (a) preparing an epitaxial substrate having a nitride semiconductor layer formed on a first main surfa","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11961765","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11961765","citation_suggestion":"Patentable. \"Method for manufacturing a semiconductor substrate and device by bonding an epitaxial substrate to a first support substrate, forming a first and second protective thin film layer, and exposing and bonding a nitride semiconductor layer to a second support substrate\" (US-11961765). https://patentable.app/patents/US-11961765","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11961765","json":"https://patentable.app/api/llm-context/US-11961765","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T20:29:53.610Z"}