{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11961833","patent":{"patent_number":"US-11961833","title":"High voltage device and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2022-03-23T00:00:00.000Z","publication_date":"2024-04-16T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":10,"abstract":"A high voltage device is used as a lower switch in a power stage of a switching regulator. The high voltage device includes at least one lateral diffused metal oxide semiconductor (LDMOS) device, a first isolation region, a second isolation region, a third isolation region, and a current limiting device. The first isolation region is located in a semiconductor layer, and encloses the LDMOS device. The second isolation region has a first conductivity type, and encloses the first isolation region in the semiconductor layer. The third isolation region has a second conductivity type, and encloses the second isolation region in the semiconductor layer. The current limiting device is electrically connected to the second isolation region, and is configured to operably suppress a parasitic silicon controlled rectifier (SCR) from being turned on."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High voltage device and manufacturing method thereof","description":"A high voltage device is used as a lower switch in a power stage of a switching regulator. The high voltage device includes at least one lateral diffused metal oxide semiconductor (LDMOS) device, a fi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11961833","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11961833","citation_suggestion":"Patentable. \"High voltage device and manufacturing method thereof\" (US-11961833). https://patentable.app/patents/US-11961833","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11961833","json":"https://patentable.app/api/llm-context/US-11961833","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T12:36:52.095Z"}