{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11961840","patent":{"patent_number":"US-11961840","title":"Semiconductor device having nanosheet transistor and methods of fabrication thereof","assignee":null,"inventors":[],"filing_date":"2022-08-09T00:00:00.000Z","publication_date":"2024-04-16T00:00:00.000Z","cpc_codes":["H01L","H01L","B82Y"],"num_claims":20,"abstract":"A semiconductor device structure is provided. The device includes one or more first semiconductor layers, each first semiconductor layer of the one or more first semiconductor layers is surrounded by a first intermixed layer, wherein the first intermixed layer comprises a first material and a second material. The device also includes a first gate electrode surrounding the first intermixed layer, one or more second semiconductor layers disposed below and aligned with the one or more first semiconductor layers, each second semiconductor layer of the one or more second semiconductor layers is surrounded by a second intermixed layer and a third intermixed layer, wherein the second intermixed layer comprises the first material and a fifth material, and the third intermixed layer comprises a third material and a sixth material, and wherein the second material is a dipole material having a first polarity, and the fifth material and the sixth material are a dipole material having a second polarity opposite of the first polarity."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device having nanosheet transistor and methods of fabrication thereof","description":"A semiconductor device structure is provided. The device includes one or more first semiconductor layers, each first semiconductor layer of the one or more first semiconductor layers is surrounded by ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11961840","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11961840","citation_suggestion":"Patentable. \"Semiconductor device having nanosheet transistor and methods of fabrication thereof\" (US-11961840). https://patentable.app/patents/US-11961840","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11961840","json":"https://patentable.app/api/llm-context/US-11961840","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:46:46.579Z"}