{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11961895","patent":{"patent_number":"US-11961895","title":"Gate stacks with multiple high-κ dielectric layers","assignee":null,"inventors":[],"filing_date":"2021-09-08T00:00:00.000Z","publication_date":"2024-04-16T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A first semiconductor device includes an interfacial layer over a substrate, a first high-κ dielectric layer over the interfacial layer, a second high-κ dielectric layer over the first high-κ dielectric layer, a Ti—Si mixing layer over the second high-κ dielectric layer, and a gate electrode layer over the Ti—Si mixing layer. A second semiconductor device includes an interfacial layer over a substrate, a first high-κ dielectric layer over the interfacial layer, a Ti—Si mixing layer over the first high-κ dielectric layer, a second high-κ dielectric layer over the Ti—Si mixing layer, and a gate electrode layer over the second high-κ dielectric layer. The method includes forming an interfacial layer over a substrate, forming a first high-κ dielectric layer over the interfacial layer, forming a second high-κ dielectric layer over the first high-κ dielectric layer, and forming a gate electrode layer over the second high-κ dielectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Gate stacks with multiple high-κ dielectric layers","description":"A first semiconductor device includes an interfacial layer over a substrate, a first high-κ dielectric layer over the interfacial layer, a second high-κ dielectric layer over the first high-κ dielectr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11961895","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11961895","citation_suggestion":"Patentable. \"Gate stacks with multiple high-κ dielectric layers\" (US-11961895). https://patentable.app/patents/US-11961895","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11961895","json":"https://patentable.app/api/llm-context/US-11961895","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T15:36:09.082Z"}