{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11961909","patent":{"patent_number":"US-11961909","title":"Semiconductor device including a MISFET and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2022-03-03T00:00:00.000Z","publication_date":"2024-04-16T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":16,"abstract":"Semiconductor device includes a well region formed in an active region of a semiconductor substrate, a gate electrode formed on the well region via a gate dielectric film, and a source region and a drain region formed in the well region. At the vicinity of both end portions of the active region in the first direction, a first region and a second region having the same conductivity type as the well region and having impurity concentration higher than that of the well region are formed in the well region. The first region and the second region are spaced from each other in a second direction perpendicular to the first direction, and at least a portion of each of them is located under the gate electrode. The first region and the second region are not formed at the center portion of the active region in the first direction."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device including a MISFET and method of manufacturing the same","description":"Semiconductor device includes a well region formed in an active region of a semiconductor substrate, a gate electrode formed on the well region via a gate dielectric film, and a source region and a dr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11961909","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11961909","citation_suggestion":"Patentable. \"Semiconductor device including a MISFET and method of manufacturing the same\" (US-11961909). https://patentable.app/patents/US-11961909","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11961909","json":"https://patentable.app/api/llm-context/US-11961909","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T15:09:55.579Z"}