{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11961912","patent":{"patent_number":"US-11961912","title":"Merged source/drain features","assignee":null,"inventors":[],"filing_date":"2022-06-06T00:00:00.000Z","publication_date":"2024-04-16T00:00:00.000Z","cpc_codes":["A61B","A61B","G01N","G01N","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"The present application provides a semiconductor device and the method of making the same. The method includes recessing a fin extending from a substrate, forming a base epitaxial feature on the recessed fin, forming a bar-like epitaxial feature on the base epitaxial feature, and forming a conformal epitaxial feature on the bar-like epitaxial feature. The forming of the bar-like epitaxial feature includes in-situ doping the bar-like epitaxial feature with an n-type dopant at a first doping concentration. The forming of the conformal epitaxial feature includes in-situ doping the conformal epitaxial feature with a second doping concentration greater than the first doping concentration."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Merged source/drain features","description":"The present application provides a semiconductor device and the method of making the same. The method includes recessing a fin extending from a substrate, forming a base epitaxial feature on the reces","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11961912","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11961912","citation_suggestion":"Patentable. \"Merged source/drain features\" (US-11961912). https://patentable.app/patents/US-11961912","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11961912","json":"https://patentable.app/api/llm-context/US-11961912","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T17:24:54.980Z"}