{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11963365","patent":{"patent_number":"US-11963365","title":"Back-end active device, semiconductor device and semiconductor chip","assignee":null,"inventors":[],"filing_date":"2022-02-18T00:00:00.000Z","publication_date":"2024-04-16T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":20,"abstract":"An active device, a semiconductor device and a semiconductor chip are provided. The active device includes: a channel layer; a top source/drain electrode, disposed at a top side of the channel layer; a first bottom source/drain electrode and a second bottom source/drain electrode, disposed at a bottom side of the channel layer; a first gate structure and a second gate structure, located between the top source/drain electrode and the first bottom source/drain electrode, wherein the first gate structure comprises a non-ferroelectric dielectric layer, and the second gate structure comprises a ferroelectric layer; and a third gate structure and a fourth gate structure, located between the top source/drain electrode and the second bottom source/drain electrode, wherein the third gate structure comprises a non-ferroelectric dielectric layer, and the fourth gate structure comprises a ferroelectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Back-end active device, semiconductor device and semiconductor chip","description":"An active device, a semiconductor device and a semiconductor chip are provided. The active device includes: a channel layer; a top source/drain electrode, disposed at a top side of the channel layer; ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11963365","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11963365","citation_suggestion":"Patentable. \"Back-end active device, semiconductor device and semiconductor chip\" (US-11963365). https://patentable.app/patents/US-11963365","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11963365","json":"https://patentable.app/api/llm-context/US-11963365","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T18:59:44.217Z"}