{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11963462","patent":{"patent_number":"US-11963462","title":"Magneto-resistive random access memory magnetic tunnel junction and cell with voltage-controlled writing","assignee":null,"inventors":[],"filing_date":"2022-03-18T00:00:00.000Z","publication_date":"2024-04-16T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C"],"num_claims":20,"abstract":"A memory device has a magnetic tunnel junction (MTJ) element that includes a free layer structure, a free/pinned layer structure, and a tunnel barrier structure between the free layer structure and the free/pinned layer structure. A first electrode is coupled to the free layer structure, and a second electrode is coupled to the free/pinned layer structure. Processing circuitry is operatively coupled to the MTJ element. The processing circuitry is configured to apply a voltage to the MTJ element to modulate magnetic anisotropy using an electric field, to enable writing with reduced write currents; issue a charge current to the MTJ element to induce spin-dependent writing and magnetic spin accumulation in the free layer structure to set a bit state of the MTJ element, using spin-transfer torque into the free layer structure; and remove the voltage from the MTJ element that modulates the magnetic anisotropy, to perform a write operation."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Magneto-resistive random access memory magnetic tunnel junction and cell with voltage-controlled writing","description":"A memory device has a magnetic tunnel junction (MTJ) element that includes a free layer structure, a free/pinned layer structure, and a tunnel barrier structure between the free layer structure and th","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11963462","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11963462","citation_suggestion":"Patentable. \"Magneto-resistive random access memory magnetic tunnel junction and cell with voltage-controlled writing\" (US-11963462). https://patentable.app/patents/US-11963462","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11963462","json":"https://patentable.app/api/llm-context/US-11963462","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T13:42:45.603Z"}