{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11967521","patent":{"patent_number":"US-11967521","title":"Integrated semiconductor device and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2022-01-05T00:00:00.000Z","publication_date":"2024-04-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"An integrated semiconductor device includes a substrate, semiconductor circuit layers, an insulating material, and an interconnection layer. The semiconductor circuit layers are disposed above the substrate. The semiconductor circuit layers have device portions and isolating portions, and the isolating portions are located among the device portions. The insulating material is disposed on the semiconductor circuit layers, and the interconnection layer is embedded in the insulating material and electrically connected to the semiconductor circuit layers. The isolating portions provide electrical isolation between adjacent device portions. The interconnection layer has circuits embedded in the insulating material on the device portions. The insulating material has isolating structures raised from top surfaces of the circuits on the device portion, and some of the semiconductor circuit layers form at least one heterojunction."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Integrated semiconductor device and method for manufacturing the same","description":"An integrated semiconductor device includes a substrate, semiconductor circuit layers, an insulating material, and an interconnection layer. The semiconductor circuit layers are disposed above the sub","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11967521","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11967521","citation_suggestion":"Patentable. \"Integrated semiconductor device and method for manufacturing the same\" (US-11967521). https://patentable.app/patents/US-11967521","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11967521","json":"https://patentable.app/api/llm-context/US-11967521","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:00:09.193Z"}