{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11967530","patent":{"patent_number":"US-11967530","title":"Method for producing GaN layered substrate","assignee":null,"inventors":[],"filing_date":"2019-06-11T00:00:00.000Z","publication_date":"2024-04-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":11,"abstract":"Provided is a method for producing a GaN layered substrate, comprising the steps of: subjecting a C-plane sapphire substrate 11 having an off-angle of 0.5° to 5° to a high-temperature nitriding treatment at 800° C. to 1,000° C. to carry out a surface treatment of the C-plane sapphire substrate; carrying out epitaxial growth of GaN on the surface of the surface-treated C-plane sapphire substrate 11 to produce a GaN film carrier having a surface of an N polar face; forming an ion implantation region 13ion by carrying out ion implantation on the GaN film 13; laminating and joining a support substrate 12 with the GaN film-side surface of the ion-implanted GaN film carrier; and separating at the ion-implanted region 13ion in the GaN film 13 to transfer a GaN thin film 13a onto the support substrate 12, to produce a GaN layered substrate 10 having, on the support substrate 12, a GaN thin film 13a having a surface of a Ga polar face. A GaN layered substrate having a good crystallinity and a surface of a Ga face is obtained by a single transfer process."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for producing GaN layered substrate","description":"Provided is a method for producing a GaN layered substrate, comprising the steps of: subjecting a C-plane sapphire substrate 11 having an off-angle of 0.5° to 5° to a high-temperature nitriding treatm","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11967530","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11967530","citation_suggestion":"Patentable. \"Method for producing GaN layered substrate\" (US-11967530). https://patentable.app/patents/US-11967530","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11967530","json":"https://patentable.app/api/llm-context/US-11967530","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T00:18:07.687Z"}