{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11967533","patent":{"patent_number":"US-11967533","title":"Semiconductor devices and methods of manufacturing thereof","assignee":null,"inventors":[],"filing_date":"2021-06-23T00:00:00.000Z","publication_date":"2024-04-23T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A method includes forming a first semiconductor fin and a second semiconductor fin over a substrate that both extend along a first direction. The method includes forming a dielectric fin extending along the first direction and is disposed between the first and second semiconductor fins. The method includes forming a dummy gate structure extending along a second direction and straddling the first and second semiconductor fins and the dielectric fin. The method includes removing a portion of the dummy gate structure over the dielectric fin to form a trench by performing an etching process that includes a plurality of stages. Each of the plurality of stages includes a combination of anisotropic etching and isotropic etching such that a variation of a distance between respective inner sidewalls of the trench along the second direction is within a threshold."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor devices and methods of manufacturing thereof","description":"A method includes forming a first semiconductor fin and a second semiconductor fin over a substrate that both extend along a first direction. The method includes forming a dielectric fin extending alo","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11967533","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11967533","citation_suggestion":"Patentable. \"Semiconductor devices and methods of manufacturing thereof\" (US-11967533). https://patentable.app/patents/US-11967533","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11967533","json":"https://patentable.app/api/llm-context/US-11967533","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T11:55:51.227Z"}