{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11967554","patent":{"patent_number":"US-11967554","title":"Semiconductor devices and methods for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2022-11-08T00:00:00.000Z","publication_date":"2024-04-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"Semiconductor devices includes a first interlayer insulating layer, a lower interconnection line in the first interlayer insulating layer, an etch stop layer on the first interlayer insulating layer and the lower interconnection line, a second interlayer insulating layer on the etch stop layer, and an upper interconnection line in the second interlayer insulating layer. The upper interconnection line includes a via portion extending through the etch stop layer and contacting the lower interconnection line. The via portion includes a barrier pattern and a conductive pattern. The barrier pattern includes a first barrier layer between the conductive pattern and the second interlayer insulating layer, and a second barrier layer between the conductive pattern and the lower interconnection line. A resistivity of the first barrier layer is greater than that of the second barrier layer. A nitrogen concentration of the first barrier layer is greater than that of the second barrier layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor devices and methods for manufacturing the same","description":"Semiconductor devices includes a first interlayer insulating layer, a lower interconnection line in the first interlayer insulating layer, an etch stop layer on the first interlayer insulating layer a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11967554","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11967554","citation_suggestion":"Patentable. \"Semiconductor devices and methods for manufacturing the same\" (US-11967554). https://patentable.app/patents/US-11967554","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11967554","json":"https://patentable.app/api/llm-context/US-11967554","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T10:40:08.627Z"}