{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11967583","patent":{"patent_number":"US-11967583","title":"3D semiconductor device and structure with metal layers","assignee":null,"inventors":[],"filing_date":"2023-06-27T00:00:00.000Z","publication_date":"2024-04-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","B82Y","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device, the device comprising: a first substrate; a first metal layer disposed over said substrate; a second metal layer disposed over said first metal layer; a first level comprising a plurality of transistors, said first level disposed over said second metal layer, wherein said plurality of transistors comprise single crystal silicon; a third metal layer disposed over said first level; a fourth metal layer disposed over said third metal layer, wherein said fourth metal layer is aligned to said first metal layer with a less than 200 nm alignment error; and a via disposed through said first level, wherein said via has a diameter of less than 450 nm, wherein said fourth metal layer provides a global power distribution, and wherein said via is directly connected to at least one of said plurality of transistors."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"3D semiconductor device and structure with metal layers","description":"A semiconductor device, the device comprising: a first substrate; a first metal layer disposed over said substrate; a second metal layer disposed over said first metal layer; a first level comprising ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11967583","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11967583","citation_suggestion":"Patentable. \"3D semiconductor device and structure with metal layers\" (US-11967583). https://patentable.app/patents/US-11967583","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11967583","json":"https://patentable.app/api/llm-context/US-11967583","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:19:33.037Z"}